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參數(shù)資料
| 型號： | K4S643232C-TL70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC |
| 中文描述： | 200萬× 32內存為512k × 32 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 24/43頁 |
| 文件大?。?/td> | 1155K |
| 代理商： | K4S643232C-TL70 |
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K4S643232C
CMOS SDRAM
REV. 1.1 Nov. '99
- 24
FUNCTION TRUTH TABLE (TABLE 2)
Current
State
CS
RAS
CAS
WE
ADDR
ACTION
Note
X
H
L
L
L
L
X
X
H
L
L
L
L
X
X
H
L
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
RA
X
OP Code
X
X
X
X
X
Self
Refresh
INVALID
Exit Self Refresh --> Idle after t
RFC
(ABI)
Exit Self Refresh --> Idle after t
RFC
(ABI)
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self Refresh)
INVALID
Exit Power Down --> ABI
Exit Power Down --> ABI
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Low Power Mode)
Refer to Table 1
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
Row (& Bank) Active
Enter Self Refresh
Mode Register Access
NOP
Refer to Operations in Table 1
Begin Clock Suspend next cycle
Exit Clock Suspend next cycle
Maintain Clcok Suspend
X
X
H
H
H
L
X
X
X
H
H
H
L
X
X
X
H
H
H
L
L
L
X
X
X
X
X
X
X
H
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
L
H
L
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
H
H
L
X
X
X
X
X
6
6
7
7
8
8
8
9
9
All
Banks
Idle
*Note :
6. CKE low to high transition is asynchronous.
7. CKE low to high transition is asynchronous if restarts internal clock.
A minimum setup time 1CLK + t
SS
must be satisfied before any command other than exit.
8. Power down and self refresh can be entered only from the both banks idle state.
9. Must be a legal command.
Abbreviations : ABI = All Banks Idle, RA = Row Address
CKE
(n-1)
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
L
H
H
L
L
X
H
H
H
H
H
L
X
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
H
L
H
L
CKE
n
All
Banks
Precharge
Power
Down
Any State
other than
Listed
above
相關PDF資料 |
PDF描述 |
|---|---|
| K4S643232C-TL80 | Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 8-PDIP |
| K4S643232C | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70 |
| K4S643232C-TC10 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 |
| K4S643232C-TC55 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 |
| K4S643232C-TC60 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643232C-TL80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TC45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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