參數(shù)資料
型號(hào)： K4S643232C-TC70
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
中文描述： 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 37/43頁(yè)
文件大小： 1155K
代理商： K4S643232C-TC70
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CMOS SDRAM
K4S643232C
REV. 1.1 Nov. '99
- 37
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length=Full page
HIGH
Row Active
(A-Bank)
: Don't care
*Note :
1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
3. Burst stop is valid at every burst length.
Precharge
(A-Bank)
Burst Stop
Read
(A-Bank)
Read
(A-Bank)
1
2
1
2
BA
0
BA
1
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
QAa0
QAa1 QAa2
QAa3 QAa4
QAa0
QAa1
QAa2
QAa3 QAa4
QAb0
QAb1
QAb2
QAb3 QAb4 QAb5
QAb0
QAb1 QAb2 QAb3
QAb4 QAb5
RAa
CAa
CAb
RAa
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相關(guān)代理商/技術(shù)參數(shù)
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K4S643232C-TC8000 制造商:Samsung Semiconductor 功能描述:
K4S643232C-TL10 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TL55 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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