參數(shù)資料
型號(hào): K4S643232C-TC70
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
中文描述: 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù): 32/43頁(yè)
文件大?。?/td> 1155K
代理商: K4S643232C-TC70
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CMOS SDRAM
K4S643232C
REV. 1.1 Nov. '99
- 32
Read & Write Cycle at Different Bank @Burst Length=4
HIGH
RAa
Row Active
(A-Bank)
Write
(D-Bank)
Precharge
(B-Bank)
: Don't care
*Note :
1. t
CDL
should be met to complete write.
Read
(A-Bank)
RAa
CDb
RBc
*Note 1
tCDL
RDb
CAa
RAc
Row Active
(D-Bank)
Precharge
(A-Bank)
Read
(B-Bank)
CBc
RBb
BA
0
BA
1
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
QAa0
QAa1
QAa2
QAa3
QAa0
QAa1
QAa2
QAa3
DDb0
DDb1 DDb2 DDb3
DDb0
DDb1 DDb2 DDb3
QBc0
QBc1
QBc2
QBc0
QBc1
相關(guān)PDF資料
PDF描述
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K4S643232C-TL10 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TL55 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL