參數(shù)資料
型號(hào): K4S643232C-TC60
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
中文描述: 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù): 26/43頁(yè)
文件大?。?/td> 1155K
代理商: K4S643232C-TC60
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CMOS SDRAM
K4S643232C
REV. 1.1 Nov. '99
- 26
*Note :
1. All input expect CKE & DQM can be don't care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA0~BA1.
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
BA0
0
0
1
1
0
0
1
1
Operation
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Disable auto precharge, leave bank C active at end of burst.
Disable auto precharge, leave bank D active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Enable auto precharge, precharge bank C at end of burst.
Enable auto precharge, precharge bank D at end of burst.
4. A10/AP and BA0~BA1 control bank precharge when precharge command is asserted.
A10/AP
0
1
BA1
0
1
0
1
0
1
0
1
BA0
0
0
1
1
Active & Read/Write
Bank A
Bank B
Bank C
Bank D
BA1
0
1
0
1
BA0
0
0
1
1
x
Precharge
Bank A
Bank B
Bank C
Bank D
All Banks
A10/AP
0
0
0
0
1
BA1
0
0
1
1
x
相關(guān)PDF資料
PDF描述
K4S643232C-TC70 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
K4S643232E 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TE70 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TC45 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC50 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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