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參數(shù)資料
| 型號： | K4S640832F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 |
| 中文描述： | 64Mbit SDRAM的200萬× 8位× 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 118K |
| 代理商： | K4S640832F |
K4S640832F
CMOS SDRAM
Rev.1.1 May. 2003
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
Measure in linear
region : 1.2V ~1.8V
1.30
3.8
Volts/ns
3
Output rise time
trh
Measure in linear
region : 1.2V ~1.8V
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
Measure in linear
region : 1.2V ~1.8V
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50 Ohms to V
SS
, use these values to design to.
2. Fall time specification based on 0pF + 50 Ohms to V
DD
, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
SS
.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
- 75
Unit
Note
Min
Max
CLK cycle time
CAS latency=3
t
CC
7.5
1000
ns
1
CAS latency=2
10
CLK to valid
output delay
CAS latency=3
t
SAC
5.4
ns
1,2
CAS latency=2
6
Output data
hold time
CAS latency=3
t
OH
3
ns
2
CAS latency=2
3
CLK high pulse width
t
CH
2.5
ns
3
CLK low pulse width
t
CL
2.5
ns
3
Input setup time
t
SS
1.5
ns
3
Input hold time
t
SH
0.8
ns
3
CLK to output in Low-Z
t
SLZ
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
5.4
ns
CAS latency=2
6
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相關(guān)代理商/技術(shù)參數(shù) |
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| K4S640832F-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832F-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832H-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free |
| K4S640832H-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free |
| K4S640832H-UC75 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip SDRAM 64M-Bit 8Mx8 3.3V 54-Pin TSOP-II Tray |
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