參數(shù)資料
型號(hào)： K4S640832F
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
中文描述： 64Mbit SDRAM的200萬(wàn)× 8位× 4銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 6/11頁(yè)
文件大小： 118K
代理商： K4S640832F
K4S640832F
CMOS SDRAM
Rev.1.1 May. 2003
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= (0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
- 75
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
75
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
1
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
15
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
6
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
3
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
3
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
30
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
25
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
115
mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
135
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
1
mA
3
L
400
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S640832F-TC**
4. K4S640832F-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
相關(guān)PDF資料
PDF描述
K4S640832H-UC75 D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
K4S640432H-TC75 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S640432H-TL75 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S640432H-UC75 D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
K4S640432H-TC 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S640832F-TC75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832F-TL75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832H-TC75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S640832H-TL75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S640832H-UC75 制造商:Samsung Semiconductor 功能描述:DRAM Chip SDRAM 64M-Bit 8Mx8 3.3V 54-Pin TSOP-II Tray
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