參數(shù)資料
型號(hào)： K4S640832F
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
中文描述： 64Mbit SDRAM的200萬× 8位× 4銀行同步DRAM LVTTL
文件頁數(shù)： 11/11頁
文件大小： 118K
代理商： K4S640832F
K4S640832F
CMOS SDRAM
Rev.1.1 May. 2003
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
′
t care, H=Logic high, L=Logic low)
1. OP Code : Operand code
A
0
~ A
11
& BA
0
~ BA
1
: Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA
0
~ BA
1
: Bank select addresses.
If both BA
0
and BA
1
are "Low" at read, write, row active and precharge, bank A is selected.
If both BA
0
is "Low" and BA
1
is "High" at read, write, row active and precharge, bank B is selected.
If both BA
0
is "High" and BA
1
is "Low" at read, write, row active and precharge, bank C is selected.
If both BA
0
and BA
1
are "High" at read, write, row active and precharge, bank D is selected.
If A
10
/AP is "High" at row precharge, BA
0
and BA
1
is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
BA
0,1
A
10
/AP
A
11,
A
9
~ A
0
Note
Register
Mode register set
H
X
L
L
L
L
X
OP code
1,2
Refresh
Auto refresh
H
H
L
L
L
H
X
X
3
Self
refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank active & row addr.
H
X
L
L
H
H
X
V
Row address
Read &
column address
Auto precharge disable
H
X
L
H
L
H
X
V
L
Column
address
(A
0
~ A
8
)
4
Auto precharge enable
H
4,5
Write &
Column Address
Auto precharge disable
H
X
L
H
L
L
X
V
L
Column
address
(A
0
~ A
8
)
4
Auto precharge enable
H
4,5
Burst stop
H
X
L
H
H
L
X
X
6
Precharge
Bank selection
H
X
L
L
H
L
X
V
L
X
All banks
X
H
Clock suspend or
active power down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge power down mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
V
X
7
No operation command
H
X
H
X
X
X
X
X
L
H
H
H
Notes :
X
相關(guān)PDF資料
PDF描述
K4S640832H-UC75 D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
K4S640432H-TC75 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S640432H-TL75 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S640432H-UC75 D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
K4S640432H-TC 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S640832F-TC75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832F-TL75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832H-TC75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S640832H-TL75 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
K4S640832H-UC75 制造商:Samsung Semiconductor 功能描述:DRAM Chip SDRAM 64M-Bit 8Mx8 3.3V 54-Pin TSOP-II Tray
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