參數(shù)資料
型號: K4R271669A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述: 256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁數(shù): 58/64頁
文件大?。?/td> 4052K
代理商: K4R271669A
Page 56
Direct RDRAM
K4R271669A/K4R441869A
Rev. 1.02 Jan. 2000
Capacitance and Inductance
Figure 60 shows the equivalent load circuit of the RSL and
CMOS pins. The circuit models the load that the device
presents to the Channel.
Figure 60: Equivalent Load Circuit for RSL Pins
Gnd Pin
CTM,CTMN,
CFM,CFMN Pin
Pad
L
I
R
I
C
I
Gnd Pin
SCK,CMD Pin
Pad
L
I,CMOS
C
I,CMOS
Gnd Pin
SIO0,SIO1 Pin
Pad
L
I,CMOS
C
I,CMOS,SIO
Gnd Pin
DQA,DQB,RQ Pin
Pad
L
I
R
I
C
I
相關(guān)PDF資料
PDF描述
K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869A-N(M)CG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4R271669A-N(M)CK7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669A-N(M)CK8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669A-NB(M)CCG6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669A-NMCG6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669A-NMCK7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM