- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373065 > K4R271669A (SAMSUNG SEMICONDUCTOR CO. LTD.) 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM PDF資料下載
參數(shù)資料
| 型號(hào)： | K4R271669A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 256 × 16/18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 42/64頁 |
| 文件大小： | 4052K |
| 代理商： | K4R271669A |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁當(dāng)前第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁
Page 40
Direct RDRAM
K4R271669A/K4R441869A
Rev. 1.02 Jan. 2000
PDEV5..0 address packet and exits NAP or PDN when the
wake-up sequence is presented on the CMD wire. The ROW
and COL pins must be quiet at a time t
S4
/t
H4
around the indi-
cated falling SCK edge (timed with the PDNX or NAPX
register fields). After that, ROW and COL packets may be
directed to the RDRAM which is now in ATTN or STBY
state.
Figure 49 shows the constraints for entering and exiting
NAP and PDN states. On the left side, an RDRAM exits
NAP state at the end of cycle T
3
. This RDRAM may not re-
enter NAP or PDN state for an interval of t
NU0
. The
RDRAM enters NAP state at the end of cycle T
13
. This
RDRAM may not re-exit NAP state for an interval of t
NU1
.
The equations for these two parameters depend upon a
number of factors, and are shown at the bottom of the figure.
NAPX is the value in the NAPX field in the NAPX register.
On the right side of Figure 49, an RDRAM exits PDN state
at the end of cycle T
3
. This RDRAM may not re-enter PDN
or NAP state for an interval of t
PU0
. The RDRAM enters
PDN state at the end of cycle T
13
. This RDRAM may not re-
exit PDN state for an interval of t
PU1
. The equations for
these two parameters depend upon a number of factors, and
are shown at the bottom of the figure. PDNX is the value in
the PDNX field in the PDNX register.
Figure 46: STBY Entry (left) and STBY Exit (right)
STBY
ATTN
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
17
T
21
T
18
T
22
T
19
23
T
0
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
17
T
21
T
18
T
22
T
19
T
23
t
AS
RLXR
Power
State
ATTN
Power
State
STBY
t
SA
ROP a0
RLXC
RLXX
TFRMt
CYCLE
ROP = non-broadcast ROWA
or ROWR/ATTN
a0 = {d0,b0,r0}
a1 = {d1,b1,c1}
No COL packets may be
placed in the three
indicated positions; i.e. at
(TFRM - {1,2,3})t
CYCLE
.
A COL packet to device d0
(or any other device) is okay
at
(TFRM)t
CYCLE
or later.
A COL packet to another
device (d1!= d0) is okay at
(TFRM - 4)t
CYCLE
or earlier.
XXXXXOP a0
CCCCOP a1
Figure 47: NAP Entry (left) and PDN Entry (right)
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
17
T
21
T
18
T
22
T
19
23
T
0
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
17
T
21
T
18
T
22
T
19
T
23
ROP a0
(NAPR)
Power
State
Power
State
a
The (eventual) NAP/PDN exit will be to the same ATTN/STBY state the RDRAM was in prior to NAP/PDN entry
t
CD
ROP a1
COP a0
XOP a0
COP a1
XOP a1
t
ASN
ATTN/STBY
a
NAP
ROP a0
(PDNR)
ROP a1
COP a0
XOP a0
COP a1
XOP a1
t
ASP
ATTN/STBY
a
PDN
t
CD
t
NPQ
restricted
t
NPQ
restricted
restricted
restricted
a0 = {d0,b0,r0,c0}
a1 = {d1,b1,r1,c1}
No ROW or COL packets
directed to device d0 may
overlap the restricted
interval. No broadcast ROW
packets may overlap the quiet
interval.
ROW or COL packets to a
device other than d0 may
overlap the restricted
interval.
ROW or COL packets
directed to device d0 after the
restricted interval will be
ignored.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4R271669A-N(M)CK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869A | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869A-N(M)CG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869A-N(M)CK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869A-N(M)CK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R271669A-N(M)CK7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-N(M)CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-NB(M)CCG6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-NMCG6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-NMCK7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。