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參數(shù)資料
| 型號： | K4R271669A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 256 × 16/18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 52/64頁 |
| 文件大?。?/td> | 4052K |
| 代理商： | K4R271669A |
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Page 50
Direct RDRAM
K4R271669A/K4R441869A
Rev. 1.02 Jan. 2000
CMOS - Receive Timing
Figure 56 is a timing diagram which shows the detailed
requirements for the CMOS input signals.
The CMD and SIO0 signals are inputs which receive infor-
mation transmitted by a controller or by another RDRAM’s
SIO1 output. SCK is the CMOS clock signal driven by the
controller. All signals are high true.
The cycle time, high phase time, and low phase time of the
SCK clock are t
CYCLE1
, t
CH1
and t
CL1
, all measured at the
50% level. The rise and fall times of SCK, CMD, and SIO0
are t
DR1
and t
DF1
, measured at the 20% and 80% levels.
The CMD signal is sampled twice per t
CYCLE1
interval, on
the rising edge (odd data) and the falling edge (even data).
The set/hold window of the sample points is t
S1
/t
H1.
The
SCK and CMD timing points are measured at the 50% level.
The SIO0 signal is sampled once per t
CYCLE1
interval on the
falling edge. The set/hold window of the sample points is
t
S2
/t
H2.
The SCK and SIO0 timing points are measured at the
50% level.
Figure 56: CMOS Timing - Data Signals for Receive
V
IH,CMOS
50%
V
IL,CMOS
80%
20%
SCK
t
S1
CMD
t
DR2
t
H1
t
S1
t
H1
even
odd
t
DF2
V
IH,CMOS
50%
V
IL,CMOS
80%
20%
t
DR2
t
DF2
t
CH1
t
CL1
t
CYCLE1
t
S2
SIO0
t
DR1
t
H2
t
DF1
V
IH,CMOS
50%
V
IL,CMOS
80%
20%
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相關代理商/技術參數(shù) |
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|---|---|
| K4R271669A-N(M)CK7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669A-N(M)CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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| K4R271669A-NMCG6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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