參數(shù)資料
型號(hào)： K4N56163QF-GC25
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mbit gDDR2 SDRAM
中文描述： 片256Mbit GDDR2 SDRAM的
文件頁數(shù)： 46/73頁
文件大小： 1262K
代理商： K4N56163QF-GC25
- 46 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Writes intrrupted by a write
Burst write can only be interrupted by another write with 4 bit burst boundary. Any other case of write interrupt is not
allowed.
Write Burst Interrupt Timing Example: (CL=3, AL=0, RL=3, WL=2, BL=8)
Notes:
1.
2.
Write burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
Write burst of 8 can only be interrupted by another Write command. Write burst interruption by Read command or
Precharge command is prohibited.
Write burst interrupt must occur exactly two clocks after previous Write command. Any other Write burst interrupt
timings are prohibited.
Write burst interruption is allowed to any bank inside DRAM.
Write burst with Auto Precharge enabled is not allowed to interrupt.
Write burst interruption is allowed by another Write with Auto Precharge command.
All command timings are referenced to burst length set in the mode register. They are not referenced to actual burst.
For example, minimum Write to Precharge timing is WL+BL/2+tWR where tWR starts with the rising clock after the
un-interrupted burst end and not from the end of actual burst end.
3.
4.
5.
6.
7.
CK/CK
CMD
DQS/DQS
DQs
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
A0
A1
A2
A3
B0
B1
B2
B3
B5
B6
B7
Write B
Write A
B4
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