參數(shù)資料
型號： K4H560438D-GCA2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DDR 256Mb
中文描述： 的DDR 256Mb的
文件頁數(shù)： 21/26頁
文件大?。?/td> 291K
代理商： K4H560438D-GCA2
- 21 -
DDR SDRAM
Rev. 2.2 Mar. ’03
K4H561638D
4M x 16Bit x 4 Banks Double Data Rate SDRAM
The K4H561638D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 4,194,304 words by 16 bits, fabricated
with SAMSUNG
′
s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to
333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and
programmable latencies allow the device to be useful for a variety of high performance memory system applications.
GENERAL DESCRIPTION
Absolute Maximum Rating
Parameter
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
1.5
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative to VSS
Voltage on VDD & VDDQ supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC Operating Conditions
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V)
V
DD
2.3
2.7
I/O Supply voltage
V
DDQ
2.3
2.7
V
I/O Reference voltage
V
REF
VDDQ/2-50mV
VDDQ/2+50mV
V
1
I/O Termination voltage(system)
V
TT
V
REF
-0.04
V
REF
+0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+0.15
V
DDQ
+0.3
V
4
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
-0.15
V
4
Input Voltage Level, CK and CK inputs
V
IN
(DC)
-0.3
V
DDQ
+0.3
V
Input Differential Voltage, CK and CK inputs
V
ID
(DC)
0.3
V
DDQ
+0.6
V
3
Input crossing point voltage, CK and CK inputs
V
IX
(DC)
1.15
1.35
V
5
Input leakage current
I
I
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
+ 0.84V
I
OH
-16.8
mA
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
- 0.84V
I
OL
16.8
mA
Output High Current(Half strengh driver)
;V
OUT
=
V
TT
+ 0.45V
I
OH
-9
mA
Output High Current(Half strengh driver)
;V
OUT
= V
TT
- 0.45V
I
OL
9
mA
相關(guān)PDF資料
PDF描述
K4H560438D-GCB0 DDR 256Mb
K4H560438D-GCB3 DDR 256Mb
K4H560438D-GLA2 DDR 256Mb
K4H560438E-ZLB0 Connector Kit; Contents Of Kit:C14610F0240001 24 position bulkhead housing double latch, C14610B0241021 24 position female insert wire protect, Without spring cover; For Use With:C146 Heavy Duty Industrial Connectors RoHS Compliant: Yes
K4H560438E-ZLB3 Connector Kit; Contents Of Kit:C14610G0245001 24 position hood PG 21 double latch low profile side entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560438D-GCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
K4H560438D-GCB3 制造商:Samsung Semiconductor 功能描述:DRAM Chip DDR SDRAM 256M-Bit 64Mx4 2.5V 60-Pin FBGA Tray
K4H560438D-GLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
K4H560438D-GLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
K4H560438D-GLB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
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