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參數(shù)資料
| 型號： | K4H510838D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb D-die DDR SDRAM Specification |
| 中文描述： | ?的512Mb芯片DDR SDRAM內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 373K |
| 代理商： | K4H510838D |
Rev. 1.2 January 2006
DDR SDRAM
K4H510438D
K4H510838D
K4H511638D
6.0 Block Diagram
(32M x 4 / 16Mb x 8 / 8Mb x 16 I/O x4 Banks)
Bank Select
Timing Register
A
R
R
R
C
Data Input Register
Serial to parallel
16Mx8/ 8Mx16/ 4Mx32
16Mx8/ 8Mx16/ 4Mx32
16Mx8/ 8Mx16/ 4Mx32
S
2
O
I
Column Decoder
Latency & Burst Length
Programming Register
D
S
G
CK, CK
ADD
LCKE
CK, CK
CKE
CS
RAS
CAS
WE
CK, CK
LCAS
LRAS
LCBR
LWE
LWCBR
L
L
CK, CK
x8/x16/32
x8/x16/32
x4/x8/16
x4/x8/16
LWE
LDM (x4/x8)
LUDM (x16)
x4/x8/16
DQi
Data Strobe
LDM (x4/x8)
LUDM (x16)
DM Input Register
LDM (x4/x8)
LUDM (x16)
16Mx8/ 8Mx16/ 4Mx32
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510738E | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| K4H510838D-LA2 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB0 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-UCC | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838C-UC | 512Mb C-die DDR SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510838D-LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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