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參數(shù)資料
| 型號(hào)： | K4H510838D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb D-die DDR SDRAM Specification |
| 中文描述： | ?的512Mb芯片DDR SDRAM內(nèi)存規(guī)格 |
| 文件頁(yè)數(shù)： | 24/24頁(yè) |
| 文件大小： | 373K |
| 代理商： | K4H510838D |
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Rev. 1.2 January 2006
DDR SDRAM
K4H510438D
K4H510838D
K4H511638D
Pulldown Current (mA)
pullup Current (mA)
Voltage
(V)
Typical
Low
Typical
High
Minimum
Maximum
Typical
Low
Typical
High
Minimum
Maximum
0.1
3.4
3.8
2.6
5.0
-3.5
-4.3
-2.6
-5.0
0.2
6.9
7.6
5.2
9.9
-6.9
-8.2
-5.2
-9.9
0.3
10.3
11.4
7.8
14.6
-10.3
-12.0
-7.8
-14.6
0.4
13.6
15.1
10.4
19.2
-13.6
-15.7
-10.4
-19.2
0.5
16.9
18.7
13.0
23.6
-16.9
-19.3
-13.0
-23.6
0.6
19.6
22.1
15.7
28.0
-19.4
-22.9
-15.7
-28.0
0.7
22.3
25.0
18.2
32.2
-21.5
-26.5
-18.2
-32.2
0.8
24.7
28.2
20.8
35.8
-23.3
-30.1
-20.4
-35.8
0.9
26.9
31.3
22.4
39.5
-24.8
-33.6
-21.6
-39.5
1.0
29.0
34.1
24.1
43.2
-26.0
-37.1
-21.9
-43.2
1.1
30.6
36.9
25.4
46.7
-27.1
-40.3
-22.1
-46.7
1.2
31.8
39.5
26.2
50.0
-27.8
-43.1
-22.2
-50.0
1.3
32.8
42.0
26.6
53.1
-28.3
-45.8
-22.3
-53.1
1.4
33.5
44.4
26.8
56.1
-28.6
-48.4
-22.4
-56.1
1.5
34.0
46.6
27.0
58.7
-28.7
-50.7
-22.6
-58.7
1.6
34.3
48.6
27.2
61.4
-28.9
-52.9
-22.7
-61.4
1.7
34.5
50.5
27.4
63.5
-28.9
-55.0
-22.7
-63.5
1.8
34.8
52.2
27.7
65.6
-29.0
-56.8
-22.8
-65.6
1.9
35.1
53.9
27.8
67.7
-29.2
-58.7
-22.9
-67.7
2.0
35.4
55.0
28.0
69.8
-29.2
-60.0
-22.9
-69.8
2.1
35.6
56.1
28.1
71.6
-29.3
-61.2
-23.0
-71.6
2.2
35.8
57.1
28.2
73.3
-29.5
-62.4
-23.0
-73.3
2.3
36.1
57.7
28.3
74.9
-29.5
-63.1
-23.1
-74.9
2.4
36.3
58.2
28.3
76.4
-29.6
-63.8
-23.2
-76.4
2.5
36.5
58.7
28.4
77.7
-29.7
-64.4
-23.2
-77.7
2.6
36.7
59.2
28.5
78.8
-29.8
-65.1
-23.3
-78.8
2.7
36.8
59.6
28.6
79.7
-29.9
-65.8
-23.3
-79.7
Table 9. Weak Driver Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510738E | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| K4H510838D-LA2 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB0 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-UCC | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838C-UC | 512Mb C-die DDR SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510838D-LA2 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB3 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LCC | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-TCA0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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