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參數(shù)資料
| 型號： | K4H510838D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb D-die DDR SDRAM Specification |
| 中文描述： | ?的512Mb芯片DDR SDRAM內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大?。?/td> | 373K |
| 代理商： | K4H510838D |
Rev. 1.2 January 2006
DDR SDRAM
K4H510438D
K4H510838D
K4H511638D
(V
DD
=2.7V, T = 10
°
C)
Symbol
128Mx4 (K4H510438D)
Unit Notes
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
IDD0
95
95
mA
IDD1
125
125
mA
IDD2P
5
5
mA
IDD2F
30
30
mA
IDD2Q
25
25
mA
IDD3P
30
30
mA
IDD3N
45
45
mA
IDD4R
125
125
mA
IDD4W
130
130
mA
IDD5
195
195
mA
IDD6
Normal
5
5
mA
Low power
3
3
mA
IDD7A
325
325
mA
Symbol
64Mx8 (K4H510838D)
Unit Notes
CC(DDR400@CL=3)
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
120
105
95
95
mA
IDD1
150
135
125
125
mA
IDD2P
5
5
5
5
mA
IDD2F
30
30
30
30
mA
IDD2Q
25
25
25
25
mA
IDD3P
45
30
30
30
mA
IDD3N
60
45
45
45
mA
IDD4R
155
140
125
125
mA
IDD4W
175
150
130
130
mA
IDD5
220
205
195
195
mA
IDD6
Normal
5
5
5
5
mA
Low power
3
3
3
3
mA
IDD7A
385
360
325
325
mA
Symbol
32Mx16 (K4H511638D)
Unit Notes
CC(DDR400@CL=3)
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
120
105
95
95
mA
IDD1
160
140
130
130
mA
IDD2P
5
5
5
5
mA
IDD2F
30
30
30
30
mA
IDD2Q
25
25
25
25
mA
IDD3P
45
30
30
30
mA
IDD3N
60
45
45
45
mA
IDD4R
190
170
155
155
mA
IDD4W
215
185
160
160
mA
IDD5
220
205
195
195
mA
IDD6
Normal
5
5
5
5
mA
Low power
3
3
3
3
mA
IDD7A
400
380
345
345
mA
15.0 DDR SDRAM IDD spec table
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510738E | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| K4H510838D-LA2 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB0 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-UCC | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838C-UC | 512Mb C-die DDR SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510838D-LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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