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參數(shù)資料
| 型號： | K4H1G0438M-ULA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 1Gb的的M -模與鉛DDR SDRAM的規(guī)格66 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁數(shù)： | 49/53頁 |
| 文件大小： | 669K |
| 代理商： | K4H1G0438M-ULA2 |
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- 49 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
11.2 Half strength driver
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Maximum
Typical High
Minumum
Typical Low
Vout(V)
I
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
0.0
0.5
1.0
1.5
2.0
2.5
I
Minimum
Typical Low
Typical High
Maximum
0
10
30
40
50
60
70
80
90
0.0
1.0
2.0
I
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.
Vout(V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H1G0438M-ULB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-ULB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0638C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
| K4H1G0638C-UC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
| K4H1G0638C-UC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 1Gb C-die DDR SDRAM Specification |
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