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參數(shù)資料
| 型號： | K4E160412D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 4米× 4位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 21/21頁 |
| 文件大?。?/td> | 256K |
| 代理商： | K4E160412D |
K4E170411D, K4E160411D
K4E170412D, K4E160412D
CMOS DRAM
0
0
0
0.680 (17.28)
0.670 (17.03)
MAX
0.691 (17.55)
M
0
0.0375 (0.95)
0.032 (0.81)
0.015 (0.38)
0.026 (0.66)
0.021 (0.53)
0.027 (0.69)
MIN
0.012 (0.30)
0.006 (0.15)
0
0
#26(24)
0.050 (1.27)
26(24) SOJ
300mil
Units : Inches (millimeters)
PACKAGE DIMENSION
26(24) TSOP(II) 300mil
MAX
0.047 (1.20)
MIN
0.002 (0.05)
0.020 (0.50)
0.012 (0.30)
0.050 (1.27)
0.037 (0.95)
0.671 (17.04)
0.679 (17.24)
0.691 (17.54)
MAX
0.010 (0.25)
0.004 (0.10)
0
0
0
Units : Inches (millimeters)
0~8
0.030 (0.75)
0.018 (0.45)
TYP
0.010 (0.25)
O
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E170411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160812D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x20 mm; Packaging: Bulk |
| K4E170811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E160811D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170412C-FC60 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 16M-Bit 4Mx4 3.3V 24-Pin TSOP-II |
| K4E170412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
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