參數(shù)資料
型號(hào)： K4D263238E
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 100uF; Voltage: 100V; Case Size: 12.5x25 mm; Packaging: Bulk
中文描述： 100萬(wàn)x 32Bit的× 4銀行圖形雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁(yè)數(shù)： 14/17頁(yè)
文件大?。?/td> 310K
代理商： K4D263238E
128M GDDR SDRAM
K4D263238E-GC
- 14 -
Rev 1.7 (Nov. 2003)
Note 1 :
- The JEDEC DDR specification currently defines the output data valid window(tDV) as the time period when the data
strobe and all data associated with that data strobe are coincidentally valid.
- The previously used definition of tDV(=0.35tCK) artificially penalizes system timing budgets by assuming the worst case
output vaild window even then the clock duty cycle applied to the device is better than 45/55%
- A new AC timing term, tQH which stands for data output hold time from DQS is difined to account for clock duty cycle
variation and replaces tDV
- tQHmin = tHP-X where
. tHP=Minimum half clock period for any given cycle and is defined by clock high or clock low time(tCH,tCL)
. X=A frequency dependent timing allowance account for tDQSQmax
tQH Timing (CL4, BL2)
1
tHP
CK, CK
DQS
DQ
CS
2
5
0
COMMAND
READA
tQH
Qa0
tDQSQ(max)
tDQSQ(max)
3
4
Qa1
VALID
NOP
NOP
NOP
NOP
NOP
NOP
VALID
t
IS
t
IS
CK, CK
CKE
Command
Exit Powr Down mode
Enter Power Down mode
(Read or Write operation
must not be in progress)
3t
CK
Power Down Timing
相關(guān)PDF資料
PDF描述
K4D263238E-GC25 DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC2A DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
K4D263238E-GC33 DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC36 DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL
K4D263238E-GC40 DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238E-GC25 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC2A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC33 制造商:SAMSG 功能描述:
K4D263238E-GC36 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC40 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
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