參數(shù)資料
型號： JS28F640P30T85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, LEAD FREE, TSOP-56
文件頁數(shù)： 95/102頁
文件大?。?/td> 1609K
代理商： JS28F640P30T85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
95
C.3
CFI Query Identification String
The Identification String provides verification that the component supports the Common Flash
Interface specification. It also indicates the specification version and supported vendor-specified
command set(s).
Table 34.
CFI Identification
Table 35.
System Interface Information
Offset
Length
Description
Add.
10:
11:
12:
13:
14:
15:
16:
17:
18:
19:
1A:
Hex
Code
--51
--52
--59
--01
--00
--0A
--01
--00
--00
--00
--00
Value
"Q"
"R"
"Y"
10h
3
Query-unique ASCII string “QRY“
13h
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specified algorithms
Extended Query Table primary algorithm address
15h
2
17h
2
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
19h
2
Offset
Length
Description
Add.
1B:
Hex
Code
--17
Value
1.7V
1Bh
1
1Ch
1
1C:
--20
2.0V
1Dh
1
1D:
--85
8.5V
1Eh
1
1E:
--95
9.5V
1Fh
20h
21h
22h
23h
24h
25h
26h
1
1
1
1
1
1
1
1
“n” such that typical single word program time-out = 2
n
μ-sec
“n” such that typical max. buffer write time-out = 2
n
μ-sec
“n” such that typical block erase time-out = 2
n
m-sec
“n” such that typical full chip erase time-out = 2
n
m-sec
“n” such that maximum word program time-out = 2
n
times typical
“n” such that maximum buffer write time-out = 2
n
times typical
“n” such that maximum block erase time-out = 2
n
times typical
“n” such that maximum chip erase time-out = 2
n
times typical
1F:
20:
21:
22:
23:
24:
25:
26:
--08
--09
--0A
--00
--01
--01
--02
--00
256μs
512μs
1s
NA
512μs
1024μs
4s
NA
V
PP
[programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
V
PP
[programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
V
CC
logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
CC
logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
相關(guān)PDF資料
PDF描述
JS28F128P30B85 Intel StrataFlash Embedded Memory
JS4PS-1W Power Splitter/Combiner
JSPHS-1000 180?Voltage Variable, 700 to 1000 MHz
JSPHS-12 Phase Shifter
JSPHS-150 Narrow Band Phase Shifter 50ohm 180 Voltage Variable 100 to 150 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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JS28F640P30TF75A 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:MICJS28F640P30TF75A 64MB NOR FLASH MEMOR 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 64Mbit 4M x 16bit 75ns 56-Pin TSOP Tray 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75NS 56TSOP
JS28F640P33B85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
JS28F640P33BF70A 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 2.5V/3.3V 64Mbit 4M x 16bit 70ns 56-Pin TSOP Tray 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 64MBIT 56TSO 制造商:Micron Technology Inc 功能描述:FLASH, PARALLEL, 64MBIT, 56TSOP 制造商:Micron Technology Inc 功能描述:FLASH, PARALLEL, 64MBIT, 56TSOP; Memory Type:Flash - NOR; Memory Size:64Mbit; Memory Configuration:4M x 16bit; Supply Voltage Min:2.3V; Supply Voltage Max:3.6V; Memory Case Style:TSOP; No. of Pins:56; Clock Frequency:40MHz; Access ;RoHS Compliant: Yes
JS28F640P33T85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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