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參數(shù)資料
| 型號(hào)： | JDV2S05FS |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon Epitaxial Planar Type VCO for the UHF band |
| 中文描述： | 硅外延平面型VCO的用于UHF頻帶 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | JDV2S05FS |
JDV2S05FS
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05FS
VCO for the UHF band
High capacitance ratio: C
1V
/C
4V
= 1.9 (typ.)
Low series resistance: r
s
= 0.3
(typ.)
This device is suitable for use in a small-size tuner.
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
V
R
10
V
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
=
1
μ
A
10
V
Reverse current
I
R
V
R
=
10 V
3
nA
C
1V
V
R
=
1 V, f
=
1 MHz
3.85
4.55
Capacitance
C
4V
V
R
=
4 V, f
=
1 MHz
1.94
2.48
pF
Capacitance ratio
C
1V
/C
4V
1.7
1.9
Series resistance
r
s
V
R
=
1 V, f
=
470 MHz
0.3
0.5
Ω
Note: Signal level when capacitance is measured: V
sig
=
100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
K
0
0.2
1
0.1±0.05
0.6±0.05
0
0
A
0.48-0.03
A
M
0.07
fSC
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