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參數(shù)資料
| 型號： | JDV2S08S |
| 廠商： | Toshiba Corporation |
| 英文描述： | VCO for UHF Band Radio |
| 中文描述： | 壓控振蕩器高頻波段收音機(jī) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 89K |
| 代理商： | JDV2S08S |
JDV2S08S
2002-01-23
1
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S08S
VCO for UHF Band Radio
High Capacitance Ratio : C
1V
/C
4V
= 3.0 (typ.)
Low Series Resistance : r
s
= 0.35
(typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings
(Ta 25°C)
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
1 A
10
V
Reverse current
I
R
V
R
10 V
3
nA
C
1V
V
R
1 V, f 1 MHz
17.3
18.3
19.3
Capacitance
C
4V
V
R
4 V, f 1 MHz
5.3
6.1
6.6
pF
Capacitance ratio
C
1V
/C
4V
2.8
3
Series resistance
r
s
V
R
1 V, f 470 MHz
0.35
0.45
Note: Signal level when capacitance is measured: V
sig
500 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
10
V
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
C
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