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參數(shù)資料
| 型號： | JDV2S05E_07 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon Epitaxial Planar Type VCO for UHF band |
| 中文描述： | 硅外延平面型的VCO頻段的超高頻 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 134K |
| 代理商： | JDV2S05E_07 |
JDV2S05E
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E
VCO for UHF band
Small Package
High Capacitance Ratio : C
1V
/C
4V
= 1.9 (typ.)
Low Series Resistance : r
s
= 0.30
(typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
=
1
μ
A
10
V
Reverse current
I
R
V
R
=
10 V
3
nA
C
1V
V
R
=
1 V, f
=
1 MHz
3.85
4.2
4.55
Capacitance
C
4V
V
R
=
4 V, f
=
1 MHz
1.94
2.2
2.48
pF
Capacitance ratio
C
1V
/C
4V
1.7
1.9
Series resistance
r
s
V
R
=
1 V, f
=
470 MHz
0.3
0.5
Ω
Note: Signal level when capacitance is measured. V
sig
=
100 mV
rms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
10
V
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
F E
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