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參數(shù)資料
| 型號： | JDH3D01FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Diode Silicon Epitaxial Schottky Barrier Type For wave detection |
| 中文描述： | 二極管外延硅肖特基類型波檢測 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 187K |
| 代理商： | JDH3D01FV |
JDH3D01FV
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
○
For wave detection
Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics
(Ta
=
25°C)
Note: Signal level when capacitance is measured: Vsig
=
20 mVrms
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-2S1C
Weight:0.0015g(typ.)
Characteristic
Symbol
Rating
Unit
Reverse voltage
V
R
4
V
Forward current
I
F
25
mA
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
=
2 mA
0.25
V
Forward current
I
F
V
F
=
0.5 V
25
mA
Reverse current
I
R
V
R
=
0.5 V
25
uA
Capacitance
C
T
V
R
= 0.2 V, f = 1 MHz
0.6
pF
B H
VESM
1
±
0
0
±
0
1
2
3
0
0
0
±
0
0.8
±
0.05
0
±
0
1.2
±
0.05
0
±
0
0
±
0
1. ANODE1
2. CATHODE2
3. CATHODE1/ANODE2
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