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參數(shù)資料
| 型號(hào)： | JDP2S01AFS |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Diode Silicon Epitaxial PIN Type |
| 中文描述： | 東芝半導(dǎo)體硅外延的PIN型 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | JDP2S01AFS |
JDP2S01AFS
2003-2-21
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S01AFS
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: r
s
= 0.65
(typ.)
Low capacitance: C
T
= 0.65 pF (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
50
mA
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
= 10 μA
30
V
Reverse current
I
R
V
R
= 30 V
0.1
μA
Forward voltage
V
F
I
F
= 50 mA
0.86
0.92
V
Capacitance
C
T
V
R
= 1 V, f = 1 MHz
0.65
0.8
pF
Series resistance
r
s
I
F
= 10 mA, f = 100 MHz
0.65
1
Note: Signal level when capacitance is measured. V
sig
= 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g
1
0
±
0
0.2
±
0.05
1
.
±
0
0.
1±
0.05
0.6
±
0.05
0
1
0
1
A
0.48-0.03
A
M
0.07
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PDF描述 |
|---|---|
| JDP2S01E | UHF~VHF BAND RF ATTENUATOR APPLICATIONS |
| JDP2S01S | UHF~VHF Band RF Attenuator Applications |
| JDP2S01T | UHF~VHF Band RF Attenuator Applications |
| JDP2S01U | UHF~VHF Band RF Attenuator Applications |
| JDP2S02ACT | UHF~VHF Band RF Switch Applications |
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