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參數(shù)資料
| 型號： | JDP2S01S |
| 廠商： | Toshiba Corporation |
| 英文描述： | UHF~VHF Band RF Attenuator Applications |
| 中文描述： | ?甚高頻波段超高頻射頻衰減器的應(yīng)用 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 97K |
| 代理商： | JDP2S01S |
JDP2S01S
2001-12-05
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S01S
UHF~VHF Band RF Attenuator Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: r
s
= 0.65
(typ.)
Low capacitance: C
T
= 0.65 pF (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
50
mA
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
= 10 μA
30
V
Reverse current
I
R
V
R
= 30 V
0.1
μA
Forward voltage
V
F
I
F
= 50 mA
0.86
0.92
V
Capacitance
C
T
V
R
= 1 V, f = 1 MHz
0.65
0.8
pF
Series resistance
r
s
I
F
= 10 mA, f = 100 MHz
0.65
1
Note: Signal level when capacitance is measured. V
sig
= 20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g
1
相關(guān)PDF資料 |
PDF描述 |
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| JDP2S01T | UHF~VHF Band RF Attenuator Applications |
| JDP2S01U | UHF~VHF Band RF Attenuator Applications |
| JDP2S02ACT | UHF~VHF Band RF Switch Applications |
| JDP2S02AFS | TOSHIBA Diode Silicon Epitaxial PIN Type |
| JDP2S02AS | UHF~VHF Band RF Attenuator Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JDP2S01T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Attenuator Applications |
| JDP2S01T_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Attenuator Applications |
| JDP2S01U | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Attenuator Applications |
| JDP2S02ACT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Switch Applications |
| JDP2S02ACT(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:DIODE PIN 30V 50MA CTS2 |
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