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參數(shù)資料
| 型號(hào)： | JANTXV2N6849U |
| 廠(chǎng)商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 的HEXFET晶體管（馬鞍山的HEXFET場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | JANTXV2N6849U |
4
www.irf.com
IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
200
400
600
800
1000
1200
1400
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-6.5A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
0.1
1
10
0.5
1.0
1.5
2.0
2.5
3.0
-
S
V = 0 V
T = 25 C
T = 150 C
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