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參數(shù)資料
| 型號： | JANSR2N7262 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET MOS場效應(yīng)管) |
| 中文描述： | 的HEXFET晶體管（馬鞍山的HEXFET場效應(yīng)管） |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 302K |
| 代理商： | JANSR2N7262 |
IRHF7230, IRHF8230,JANSR-,JANSH-,2N7262 Devices
12
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
VDD = 25V, Starting TJ = 25°C,
Peak IL = 5.5A, L>11mH, RG=25
ISD
≤
5.5A, di/dt
≤
120A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG =7.5
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, codition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Pre-Irradiation
See Figures 18 through 30 for pre-radiation
curves
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IR FAR EAST:
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IR SOUTHEAST ASIA:
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IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 10/98
Case Outline and Dimensions — TO-205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
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| JANSR2N7262U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
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| JANSR2N7268U | 制造商:International Rectifier 功能描述:100V 34.000A HEXFET RADHARD - Bulk 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack |
| JANSR2N7269 | 制造商:International Rectifier 功能描述:200V 26.000A HEXFET RADHARD - Bulk |
| JANSR2N7269U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
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