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參數(shù)資料
| 型號(hào)： | JANSH2N7431U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | JANSH2N7431U |
IRHNA7064, IRHNA8064 Devices
Pre-Irradiation
8
www.irf.com
Case Outline and Dimensions — SMD-2
SMD-2
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-irradiation)
applied and VGS = 0 during irradiation per
MlL-STD -750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 25V, Starting TJ = 25
°
C,
EAS = [0.5 * L * (IL
2
)]
Peak IL = 75A, VGS = 12V, 25
≤
RG
≤
200
ISD
≤
75A, di/dt
≤
220A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150
°
C
Suggested RG = 2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
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IR ITALY:
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IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
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IR TAIWAN:
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http://www.irf.com/ Data and specifications subject to change without notice.
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