- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384552 > JANSH2N7431U (International Rectifier) HEXFET Transistor(HEXFET 晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | JANSH2N7431U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 145K |
| 代理商： | JANSH2N7431U |
IRHNA7064, IRHNA8064 Devices
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
60
—
Typ
—
0.056
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
18
—
—
—
—
—
—
—
—
0.015
0.018
4.0
—
25
250
VGS = 12V, ID =56A
VGS = 12V, ID =75A
VDS = VGS, ID = 1.0mA
VDS >15 V, IDS = 56A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 75A
VDS = Max Rating x 0.5
VGS(th)
gfs
IDSS
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
100
-100
260
60
86
27
120
76
93
—
nC
VDD = 30V, ID = 75A,
RG = 2.35
LS
Internal Source Inductance
—
2.8
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4900
2800
860
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
Measured fromdrain lead,
6mm(0.25 in) frompackage
to center of die.
Measured fromsource lead,
6mm(0.25 in) frompackage
to source bonding pad.
Modified MOSFET symbol show-
μ
A
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
75*
356
Test Conditions
—
—
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
3.0
220
3.1
V
ns
μ
C
T
j
= 25°C, IS = 75A, VGS = 0V
Tj = 25°C, IF = 75A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to PC board
Min Typ Max
—
—
—
1.6
Units
Test Conditions
0.42
—
Soldered to a 1” sp. copper-clad board
*
Current is limited by the internal wire diameter ( Die current is 75A, see page 6)
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSR2N7431U | HEXFET Transistor(HEXFET 晶體管) |
| JANSR2N7261 | HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管) |
| JANSR2N7262 | HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管) |
| JANSR2N7269 | Radiation Hardened Power MOSFET(功率MOS場(chǎng)效應(yīng)管) |
| JANSR2N7383 | HEXFET Transistor(HEXFET 晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSH2N7432 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7432U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7433 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7433U | 制造商:International Rectifier 功能描述:TRANS MOSFET - Rail/Tube |
| JANSH2N7434 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。