- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384552 > JANSH2N7431U (International Rectifier) HEXFET Transistor(HEXFET 晶體管) PDF資料下載
參數(shù)資料
| 型號： | JANSH2N7431U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 145K |
| 代理商： | JANSH2N7431U |
IRHNA7064, IRHNA8064 Devices
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
50
Q , Total Gate Charge (nC)
100
150
200
250
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
35A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
Pre-Irradiation
1
10
100
1000
0.0
1.0
2.0
3.0
4.0
5.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSR2N7431U | HEXFET Transistor(HEXFET 晶體管) |
| JANSR2N7261 | HEXFET Transistor(HEXFET MOS場效應(yīng)管) |
| JANSR2N7262 | HEXFET Transistor(HEXFET MOS場效應(yīng)管) |
| JANSR2N7269 | Radiation Hardened Power MOSFET(功率MOS場效應(yīng)管) |
| JANSR2N7383 | HEXFET Transistor(HEXFET 晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSH2N7432 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7432U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7433 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSH2N7433U | 制造商:International Rectifier 功能描述:TRANS MOSFET - Rail/Tube |
| JANSH2N7434 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。