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參數(shù)資料
| 型號(hào)： | JAN2N5671 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN HIGH POWER SILICON TRANSISTOR |
| 中文描述： | 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | JAN2N5671 |
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 488
Devices
Qualified Level
2N5671
2N5672
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
2N5671
90
120
2N5672
120
150
7.0
10
30
6.0
140
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly 800 mW/
0
C for T
C
> +25
0
C
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
T
op
,
T
stg
Symbol
R
θ
JC
Max.
1.25
Unit
0
C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc
Collector-Emitter Cutoff Current
V
CE
= 110 Vdc, V
BE
= 1.5 Vdc
V
CE
= 135 Vdc, V
BE
= 1.5 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N5671
2N5672
V
(BR)
CEO
90
120
110
140
120
150
Vdc
2N5671
2N5672
V
(BR)
CER
Vdc
2N5671
2N5672
V
(BR)
CEX
Vdc
I
CEO
10
mAdc
2N5671
2N5672
I
CEX
12
10
mAdc
120101
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