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參數(shù)資料
| 型號(hào)： | JAN2N5684 |
| 廠商： | MICROSEMI CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 65K |
| 代理商： | JAN2N5684 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 466
Devices
Qualified Level
2N5683
2N5684
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
2N5683
60
60
2N5684
80
80
5.0
15
50
300
171
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1)
Derate linearly 1.715 W/
0
C between T
C
= +25
0
C and T
C
= +200
0
C
@ T
C
= 25
0
C
@ T
C
= 100
0
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
Max.
0.584
Unit
0
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc
V
CE
= 40 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 80 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N5683
2N5684
V
(BR)
CEO
60
80
Vdc
2N5683
2N5684
I
CEO
5.0
5.0
5.0
5.0
5.0
5.0
μ
Adc
2N5683
2N5684
I
CEX
μ
Adc
2N5683
2N5684
I
CBO
μ
Adc
I
EBO
5.0
μ
Adc
120101
Page 1 of 2
TO-3*
(TO-204AA)
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