參數(shù)資料
型號： JAN2N6277
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 功率晶體管
英文描述： PNP POWER SILICON TRANSISTOR
中文描述： 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝： TO-3, 2 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 64K
代理商： JAN2N6277
TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 514
Devices
Qualified Level
2N6274
2N6277
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
2N6274
100
120
2N6277
150
180
6.0
20
50
250
143
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1)
Derate linearly 1.43 W/
0
C between T
C
= +25
0
C and T
C
= +200
0
C
@ T
C
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
T
j
,
T
stg
Symbol
R
θ
JC
Max.
0.7
Unit
0
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc
V
CE
= 75 Vdc
Collector-Emitter Cutoff Current
V
CE
= 120 Vdc, V
BE
= -1.5 Vdc
V
CE
= 180 Vdc, V
BE
= -1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 180 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N6274
2N6277
V
(BR)
CEO
100
150
Vdc
2N6274
2N6277
I
CEO
50
50
10
10
μ
Adc
2N6274
2N6277
I
CEX
μ
Adc
I
EBO
100
μ
Adc
2N6274
2N6277
I
CBO
10
10
μ
Adc
120101
Page 1 of 2
TO-3*
(TO-204AA)
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