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參數(shù)資料
| 型號： | JAN2N3868S |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP Power Transistors |
| 中文描述： | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | JAN2N3868S |
TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 350
Devices
Qualified Level
2N3867
2N3867S
2N3868
2N3868S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N3867
2N3867S
40
40
2N3868
2N3868S
60
60
4.0
3.0
1.0
10
-55 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1 mW/
0
C for T
C
> +25
0
C
@ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
P
T
T
OP,
T
STG
Symbol
R
θ
JC
Max.
17.5
Unit
0
C/W
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
μ
Adc
Collector-Emitter Breakdown Voltage
I
C
= 20 mAdc
Emitter-Base Breakdown Voltage
I
E
= 100
μ
Adc
Collector-Emitter Cutoff Current
V
EB
= 2.0 Vdc, V
CE
= 40 Vdc
V
EB
= 2.0 Vdc, V
CE
= 60 Vdc
Collector-Base Cutoff Current
V
CB
= 40 Vdc 2N3867, S
V
CB
= 60 Vdc 2N3868, S
Emitter-Base Cutoff Current
V
EB
= 4 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N3867, S
2N3868, S
V
(BR)
CBO
40
60
40
60
4.0
Vdc
2N3867, S
2N3868, S
V
(BR)
CEO
Vdc
V
(BR)
EBO
Vdc
2N3867, S
2N3868, S
I
CEX
1.0
1.0
100
μ
Adc
I
CBO
μ
Adc
I
EBO
100
μ
Adc
120101
Page 1 of 2
TO-5*
2N3867, 2N3868
TO-39*
(TO-205AD)
2N3867S, 2N3868S
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