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參數(shù)資料
| 型號(hào)： | JAN2N5415 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP LOW POWER SILICON TRANSISTOR |
| 中文描述： | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | SIMILAR TO TO-5, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | JAN2N5415 |
TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 485
Devices
Qualified Level
2N5415
2N5415S
2N5416
2N5416S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N5415
200
200
2N5416
300
350
6.0
1.0
0.75
10
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25
0
C
@ T
C
= +25
0
C
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 4.28 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1 mW/
0
C for T
C
> +25
0
C
P
T
T
op
,
T
stg
Symbol
R
θ
JC
Max.
17.5
Unit
0
C/W
TO- 5*
2N5415, 2N5416
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc
V
CE
= 200 Vdc
V
CE
= 250 Vdc
V
CE
= 300 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc, V
BE
= 1.5 Vdc
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 175 Vdc
V
CB
= 280 Vdc
Collector-Base Cutoff Current
V
CB
= 200 Vdc
V
CB
= 350 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N5415
2N5415
2N5416
2N5416
I
CEO
50
1.0
50
1.0
μ
Adc
mAdc
μ
Adc
mAdc
I
EBO
20
50
50
50
50
500
500
μ
Adc
2N5415
2N5416
I
CEX
I
CBO1
μ
Adc
μ
Adc
2N5415
2N5416
μ
Adc
2N5415
2N5416
I
CBO2
μ
Adc
120101
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PDF描述 |
|---|---|
| JAN2N5416 | PNP LOW POWER SILICON TRANSISTOR |
| JAN2N5416S | PNP LOW POWER SILICON TRANSISTOR |
| JAN2N5415S | PNP LOW POWER SILICON TRANSISTOR |
| JAN2N5672 | NPN HIGH POWER SILICON TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N5415S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-39 |
| JAN2N5415UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JAN2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 3PIN TO-5 - Bulk |
| JAN2N5416S | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JAN2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
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