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參數(shù)資料
| 型號： | JAN2N5116 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-CHANNEL J-FET |
| 中文描述： | 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA |
| 封裝： | SIMILAR TO TO-18, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | JAN2N5116 |
TECHNICAL DATA
P-CHANNEL J -FET
Qualified per MIL-PRF-19500/ 476
Devices
Qualified
Level
2N5114
2N5115
2N5116
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
=+25
0
C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Voltage
(1)
Drain-Source Voltage
(1)
Drain-Gate Voltage
Gate Current
Power Dissipation T
A
= +25
0
C
(2)
Storage Temperature Range
(1) Symmetrical geometry allows operation of those units with source/drain leads interchanged.
(2) Derate linearly 3.0 mW/
0
C for T
A
> 25
0
C.
Symbol
V
GS
V
DS
V
DG
I
G
P
T
T
stg
All Devices
30
30
30
50
0.500
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
0
C
TO-18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
(T
C
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
μ
Adc
Drain-Source “On” State Voltage
V
GS
= 0 Vdc, I
D
= -15 mAdc
V
GS
= 0 Vdc, I
D
= -7.0 mAdc
V
GS
= 0 Vdc, I
D
= -3.0 mAdc
Gate Reverse Current
V
DS
= 0, V
GS
= 20 Vdc
Drain Current Cutoff
V
GS
= 12 Vdc, V
DS
= -15 Vdc
V
GS
= 7.0 Vdc, V
DS
= -15 Vdc
V
GS
= 5.0 Vdc, V
DS
= -15 Vdc
Symbol
Min.
Max.
Units
V
(BR)GSS
30
Vdc
2N5114
2N5115
2N5116
V
DS(on)
1.3
0.8
0.6
Vdc
I
GSS
500
pAdc
2N5114
2N5115
2N5116
I
D(off)
-500
-500
-500
pAdc
pAdc
pAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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