參數(shù)資料
型號： IXTY5N50P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHV Power MOSFET - N-Channel Enhancement Mode
中文描述： 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/5頁
文件大?。?/td> 102K
代理商： IXTY5N50P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
3.0
4.7
S
C
iss
C
oss
C
rss
620
72
6.3
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
18
18
45
16
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 20
Ω
(External)
Q
g(on)
Q
gs
Q
gd
12.6
4.3
5.0
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
1.4 K/W
K/W
(TO-220)
0.25
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
5
A
I
SM
Repetitive
15
A
V
SD
I
F
= I
S
, V
GS
= 0 V, -di/dt = 100 A/
μ
s
1.5
V
t
rr
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
400
ns
TO-252 (IXTY) Outline
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 (IXTA) Outline
Pins:
1 - Gate
3 - Source
2,4 - Drain
Dim. Millimeter
Inches
Min.
Min.
Max.
Max.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
2.19
0.89
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
0.086
0.035
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0
0
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
2.28 BSC
4.57 BSC
9.40
0.51
0.64
0.89
2.54
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.090 BSC
0.180 BSC
0.370
0.020
0.025
0.035
0.100
10.42
1.02
1.02
1.27
2.92
0.410
0.040
0.040
0.050
0.115
TO-220 (IXTP) Outline
Pins:
1 - Gate 2,4 - Drain
3 - Source
Pins:
1 - Gate
3 - Source
2,4 - Drain
相關(guān)PDF資料
PDF描述
IXTP5N50P PolarHV Power MOSFET - N-Channel Enhancement Mode
IXTA5N50P PolarHV Power MOSFET - N-Channel Enhancement Mode
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IXUC120N10 Trench Power MOSFET ISOPLUS220
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