參數(shù)資料
型號(hào)： IXTP05N100
廠商： IXYS CORP
元件分類： JFETs
英文描述： High Voltage MOSFET
中文描述： 0.75 A, 1000 V, 17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 543K
代理商： IXTP05N100
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 05N100
IXTP 05N100
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 500 mA, pulse test
0.5
0.85
S
C
iss
C
oss
C
rss
240
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
22
pF
4
pF
t
d(on)
t
r
t
d(off)
t
f
11
ns
V
GS
R
G
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 1A
= 47
,
(External)
19
ns
40
ns
28
ns
Q
g(on)
Q
gs
Q
gd
10.5
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 1A
2.5
nC
5.0
nC
R
thJC
R
thCK
3.1
K/W
(IXTP)
0.50
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
750
mA
I
SM
Repetitive; pulse width limited by T
JM
3
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
2
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
710
ns
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
TO-220 AB Dimensions
TO-263 AA Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
相關(guān)PDF資料
PDF描述
IXTP10N60PM PolarHV Power MOSFET
IXTP2N60P PolarHV Power MOSFET
IXTY2N60P PolarHV Power MOSFET
IXTQ140N10P PolarHT⑩ Power MOSFET
IXTT140N10P PolarHT⑩ Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTP05N100M 功能描述:MOSFET 0.5 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTP05N100P 功能描述:MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTP06N120P 功能描述:MOSFET 0.6 Amps 1200V 32 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTP08N100D2 功能描述:MOSFET N-CH MOSFETS 1000V 800MA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTP08N100P 功能描述:MOSFET 0.8 Amps 1000V 20 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*