參數(shù)資料
型號： IXGX60N60C2D1
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
中文描述： 75 A, 600 V, N-CHANNEL IGBT
封裝： PLUS247, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 627K
代理商： IXGX60N60C2D1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min. Typ. Max.
g
fs
I
Note 1
= 50 A; V
CE
= 10 V,
40
58
S
C
ies
C
oes
C
res
3900
280
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
97
Q
g
Q
ge
Q
gc
146
28
50
nC
nC
nC
I
C
= 50 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
18
25
95
35
ns
ns
ns
ns
mJ
150
0.48
0.8
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
18
25
0.9
130
80
1.2
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.26 K/W
0.15
K/W
Inductive load, T
J
= 25
°
C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
Inductive load, T
J
= 125
°
C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
PLUS247 Outline
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
5.45 BSC
19.81
3.81
5.59
4.32
Inches
Min.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.215 BSC
.780
.150
.220 0.244
.170
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
20.32
4.32
6.20
4.83
.800
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
IXGK60N60C2D1
IXGX60N60C2D1
TO-264 AA Outline
Millimeter
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Inches
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
Min.
.190
.100
.079
.044
.094
.114
.021
1.020
.780
Max.
.202
.114
.083
.056
.106
.122
.033
1.030
.786
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= 60 A, V
GE
= 0 V,
Note 1
2.1
1.4
V
T
J
= 150
°
C
I
RM
I
F
= 60 A, V
GE
= 0 V, -di
F
/dt = 100 A/
μ
T
J
= 100
°
C
V
= 100 V
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V
8.3
A
t
rr
35
ns
R
thJC
0.85 K/W
Note 1: Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
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