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參數(shù)資料
| 型號： | IXGN200N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFASTTM IGBT |
| 中文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MINIBLOC-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 67K |
| 代理商： | IXGN200N60B |
1 - 2
2000 IXYS All rights reserved
SOT-227B, miniBLOC
Features
International standard package
miniBLOC
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current, fast switching IGBT
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 2 screws
Space savings
High power density
E
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
G
E
E
C
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
T
J
= 25 C to 150 C
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 2.4
Clamped inductive load, L = 30 H
200
120
400
A
A
A
I
= 200
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
V
ISOL
T
C
= 25 C
600
W
-55 ... +150
C
C
C
150
-55 ... +150
50/60 Hz
I
ISOL
1 mA
Mounting torque
Terminal connection torque (M4)
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA , V
GE
= 0 V
= 1 mA, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
2
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
400
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.1
V
98606 (5/99)
HiPerFAST
TM
IGBT
IXGN 200N60B
V
CES
I
C25
V
CE(sat)
= 600 V
= 200 A
= 2.1 V
Advanced Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXGN200N60B3 | 功能描述:IGBT 晶體管 G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGN320N60A3 | 功能描述:IGBT 晶體管 320 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGN400N30A3 | 功能描述:IGBT 晶體管 400 Amps 300V 1.15 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGN400N60A3 | 功能描述:IGBT 晶體管 400 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGN400N60B3 | 功能描述:IGBT 模塊 Mid-Frequency Range PT IGBTs RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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