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參數(shù)資料
| 型號： | IXGT28N120B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage IGBT |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 583K |
| 代理商： | IXGT28N120B |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= 28A; V
CE
= 10 V,
15
23
S
C
ies
C
oes
C
res
1700
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
120
pF
45
pF
Q
g
Q
ge
Q
gc
92
nC
I
C
= 28A, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
nC
35
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
30
ns
20
ns
210
280
ns
170
320
ns
2.2
5.0
mJ
t
d(on)
t
ri
E
on
35
ns
28
ns
28N120B
28N120BD1
0.3
1.4
mJ
mJ
t
d(off)
t
fi
250
ns
340
ns
E
off
4.6
mJ
R
thJC
0.5 K/W
R
thCK
(TO-247)
0.25
K/W
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-247 AD Outline
Inductive load, T
J
= 125
°
C
I
C
= 28A, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 5
Inductive load, T
J
= 25
°
C
I
C
= 28 A, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 5
Min Recommended Footprint
IXGH 28N120B
IXGT 28N120B
TO-268 Outline
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.752
.106
.055
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.00
1.15
.039
.045
.150
.161
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXGT28N120BD1 | 功能描述:IGBT 晶體管 50 Amps 1200V 3.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N30 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N30A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N30B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGT28N60B | 功能描述:IGBT 晶體管 40 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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