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參數資料
| 型號： | IXGH28N30B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 56 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | IXGH28N30B |
1 - 2
2000 IXYS All rights reserved
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard packages
JEDEC TO-268 surface and JEDEC
TO-247 AD
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Switching speed for high frequency
applications
Easy to mount with 1 screw,
(isolated mounting screw hole)
97530A (9/98)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
300
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.1
2.4
V
V
CES
I
C25
V
CE(sat)typ
=
t
fi(typ)
= 300 V
=
56 A
2.1 V
= 55 ns
IXGH 28N30B
IXGT 28N30B
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
300
300
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
56
28
A
A
A
112
I
= 56
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
260
C
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
HiPerFAST
TM
IGBT
TO-247 AD (IXGH)
GC
E
TO-268
(IXGT)
(TAB)
G
E
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXGH28N60B | Ultra Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為2.0V的絕緣柵雙極晶體管(帶二極管）) |
| IXGH28N90 | HIPERFAST IGBT |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGH28N30BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 56A I(C) | TO-247SMD |
| IXGH28N30S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 56A I(C) | TO-247SMD |
| IXGH28N60B | 功能描述:IGBT 晶體管 40 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH28N60B3D1 | 功能描述:MOSFET 28 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXGH28N60BD1 | 功能描述:IGBT 晶體管 40 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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