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參數(shù)資料
| 型號： | IXGH40N30S |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 60 A, 300 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247SMD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 94K |
| 代理商： | IXGH40N30S |
2001 IXYS All rights reserved
TO-247 SMD*
G
E
C (TAB)
C (TAB)
GC
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GE
= 1 M
300
V
T
J
300
V
V
GES
V
GEM
Continuous
±20
V
Transient
±30
V
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
C
= 25°C
60
A
T
C
= 90°C
40
A
T
C
= 25°C, 1 ms
160
A
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Clamped inductive load, L = 30
μ
H
I
CM
= 80
@ 0.8 V
CES
A
P
C
T
C
= 25°C
200
W
T
J
T
JM
T
stg
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
300
°C
°C
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
TO-247 SMD
6
4
g
g
HiPerFAST
TM
IGBT
97506E(11/01)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
300
V
I
C
2.5
5
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25°C
T
J
= 125°C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
= ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
40N30
40N30A
40N30B
1.8
2.1
2.4
V
V
V
Features
International standard packages
JEDEC TO-247 AD and surface
mountable TO-247 SMD
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Switching speed for high frequency
applications
Easy to mount with 1 screw,
(isolated mounting screw hole)
V
CES
300 V 60 A
300 V 60 A
300 V 60 A
I
C25
V
CE(sat)
1.8 V
2.1 V
2.4 V
t
fi
IXGH 40N30/S
IXGH 40N30A/S
IXGH 40N30B/S
220ns
120ns
75 ns
E
G = Gate,
E = Emitter,
* Add suffix letter "S" for surface mountable
package
C = Collector,
TAB = Collector
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH40N50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 75A I(C) | TO-247 |
| IXGH40N50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 75A I(C) | TO-247 |
| IXGH40N60 | 功能描述:IGBT 75A 600V TO-247AD RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IXGH40N60A | 功能描述:IGBT 晶體管 40 Amps 600V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH40N60A3D1 | 功能描述:MOSFET 40 Amps 600V 1.25 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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