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參數(shù)資料
| 型號： | IXGH41N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Ultra-Low VCE(sat) IGBT(VCES為600V，VCE(sat)為1.6V的絕緣柵雙極晶體管) |
| 中文描述： | 76 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | IXGH41N60 |
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2000 IXYS All rights reserved
Ultra-Low V
CE(sat)
IGBT
IXGH 41N60
V
CES
I
C25
V
CE(sat)
= 1.6 V
= 600 V
= 76 A
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
76
41
A
A
A
152
I
= 76
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25 C
200
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque (M3)
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.6
V
Features
International standard package
JEDEC TO-247 AD
Newest generation HDMOS
TM
process
Low V
- for minimum on-state conduction
losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Solid state relays
Lighting controls
Temperature regulators
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Low losses, high efficiency
High power density
97546(1/98)
TO-247 AD
GCE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
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