參數(shù)資料
型號(hào)： ISL9206EVAL1
廠商： Intersil Corporation
英文描述： FlexiHash For Battery Authentication
中文描述： FlexiHash對(duì)于電池認(rèn)證
文件頁數(shù)： 2/16頁
文件大小： 364K
代理商： ISL9206EVAL1
2
FN9260.0
March 9, 2006
Absolute Maximum Ratings (Reference to GND)
Thermal Information
Supply Voltage (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
All Other Pins. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to V
DD
+0.5V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . .4000V
Machine Model (Per EIAJ ED-4701 Method C-111). . . . . . . .400V
CDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . .-20°C to 85°C
Thermal Resistance (Typical, Note 1)
SOT-23 Package . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150°C
Maximum Storage Temperature Range. . . . . . . . . . .-40°C to 125°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300°C
θ
JA
(°C/W)
200
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows: T
A
= -20°C to 85°C; V
DD
= 2.6V to 4.8V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Supply Voltage
V
DD
During normal operation
2.6
-
4.8
V
During OTP ROM programming
2.8
-
4.8
V
Run Mode Supply Current
(exclude I/O current)
I
DD
V
DD
= 4.2V
-
110
140
μ
A
V
DD
= 4.8V
-
120
160
μ
A
Sleep Mode Supply Current:
I
DDS
V
DD
= 4.2V, XSD pin floating
-
0.15
0.5
μ
A
OTP Programming Mode Supply Current
I
DDP
For ~ 1.8ms duration per write operation
-
250
500
μ
A
Internal Regulated Supply Voltage
V
RG
Observable only in test mode
2.3
2.5
2.7
V
Internal OTP ROM Programming Voltage
V
PP
Observable only in test mode
11
12
13
V
POR Release Threshold
V
POR+
1.9
2.2
2.4
V
POR Assertion Threshold
V
POR-
1.5
1.8
2.1
V
XSD PIN CHARACTERISTICS
XSD Input Low Voltage
V
IL
-0.4
-
0.5
V
XSD Input High Voltage
V
IH
1.5
-
V
DD
+
0.4V
V
XSD Input Hysteresis
V
HYS
-
400
-
mV
XSD Internal Pull-Down Current
I
PD
V
DD
= 2.6V
-
0.8
-
μ
A
V
DD
= 4.2V
-
1.2
2.0
μ
A
V
DD
= 4.8V
-
1.8
2.5
μ
A
XSD Output Low Voltage
V
OL
I
OL
= 1mA
-
-
0.4
V
XSD Input Transition Time
t
X
10% to 90% transition time
-
-
2
μ
s
XSD Output Fall Time
t
F
90% to 10%, C
LOAD
= 12pF
-
-
50
ns
XSD Pin Capacitance
C
PIN
-
6
-
pF
XSD BUS TIMING CHARACTERISTICS
(Refer to XSD Bus Symbol Timing Definitions Tables)
Programming Bit Rate
x = 0.5 to 4
2.89
-
23.12
kHz
XSD Input Deglitch Time
T
WDG
Pulse width narrower than the deglitch time
will not cause the device to wake up
7
-
20
μ
s
Device Wake-Up Time
T
WKE
From falling-edge of break command issued
by host to falling-edge of break command
returned by device
35
60
100
μ
s
ISL9206
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