11 FN 680 0.8 N ov em be r1 5 ,20 12 . IN- IN+ Common Mode Gain Stage with Zero Correction Current S" />
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉锛� ISL28214FBZ-T13
寤犲晢锛� Intersil
鏂囦欢闋佹暩(sh霉)锛� 3/23闋�
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC OPAMP GP RRIO 5MHZ DUAL 8SOIC
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 2,500
鏀惧ぇ鍣ㄩ鍨嬶細 閫氱敤
闆昏矾鏁�(sh霉)锛� 2
杓稿嚭椤炲瀷锛� 婊挎摵骞�
杞�(zhu菐n)鎻涢€熺巼锛� 2.5 V/µs
澧炵泭甯跺绌嶏細 5MHz
闆绘祦 - 杓稿叆鍋忓锛� 3pA
闆诲 - 杓稿叆鍋忕Щ锛� 500µV
闆绘祦 - 闆绘簮锛� 300µA
闆绘祦 - 杓稿嚭 / 閫氶亾锛� 31mA
闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� 1.8 V ~ 5.5 V锛�±0.9 V ~ 2.5 V
宸ヤ綔婧害锛� -40°C ~ 125°C
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
灏佽/澶栨锛� 8-SOIC锛�0.154"锛�3.90mm 瀵級
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 8-SOIC
鍖呰锛� 甯跺嵎 (TR)
IS
L2
8
1
14
,I
S
L2
8
2
14
,I
S
L2
8
4
14
11
FN
680
0.8
N
ov
em
be
r1
5
,20
12
.
IN-
IN+
Common Mode
Gain Stage
with Zero
Correction Current
Sources
Output Stage
Pole Stage
Input Stage
1st Gain Stage
Mid Supply ref V
Voltage Noise Stage
2nd Gain Stage
28
7
20
13
2
Vin+
22
Vin-
11
6
21
17
26
Vmid
V-
5
18
V--
V+
3
VOUT
27
En
Vc
8
V++
23
29
15
14
4
12
10
19
9
16
Vg
Vcm
24
25
0
V1
1e-6
V1
1e-6
RA1
1
RA1
1
+
-
G8
GAIN = 6.283e-4
+
-
G8
GAIN =
R6
10
R6
10
M15
NCHANNELMOSFET
M15
NCHANNELMOSFET
V8
.08
V8
.08
R10
1e9
R10
1e9
+
-
G2A
GAIN =
+
-
G2A
GAIN = 351
R2
4.0004
R2
R14
636.6588k
R14
636.6588k
DY
D12
DY
D12
+
-
G5
GAIN = 2.5118E-08
+
-
G5
GAIN = 2.5118E-08
+
-
G4
GAIN = 24.89e-3
+
-
G4
GAIN = 24.89e-3
Cin1
1.26e-12
Cin1
1.26e-12
C5
10e-12
C5
10e-12
Cin2
1.26e-12
Cin2
1.26e-12
DX
D1
DX
D1
M17
PMOSISIL
M17
PMOSISIL
C4
10e-12
C4
10e-12
DX
D3
DX
D3
DY
D11
DY
D11
R20
50
R20
50
V7
.08
V7
.08
-
+
-
E2
GAIN = 1
-
+
-
E2
GAIN = 1
DX
D10
DX
D10
+
-
G9
GAIN = 0.02
+
-
G9
GAIN = 0.02
R17
1591.596
R17
I1
5e-3
I1
5e-3
+
-
G6
GAIN = 2.5118E-08
+
-
G6
GAIN = 2.5118E-08
CinDif
1.02E-12
CinDif
1.02E-12
R7
4
R7
R5
10
R5
10
V4
.61
V4
.61
+
-
G11
GAIN = 0.02
+
-
G11
GAIN = 0.02
-
+
-
E3
GAIN = 1
-
+
-
E3
GAIN = 1
R12
1
R12
1
DX
D2
DX
D2
R15
10e3
R15
10e3
R13
636.6588k
R13
636.6588k
DX
D4
DX
D4
R21
30
R21
30
V2
1e-6
V2
1e-6
V9
0.425
V9
0.425
L2
15.9159E-3
L2
15.9159E-3
R9
100
R9
100
RA2
1
RA2
1
V3
.61
V3
.61
DX
D7
DX
D7
DX
D9
DX
D9
+
-
G2
GAIN = 334.753e-3
+
-
G2
GAIN = 334.753e-3
R25
10
R25
10
R23
5e11
R23
5e11
R11
1
R11
1
M16
PMOSISIL
M16
PMOSISIL
-
+
-
En
GAIN = 1
-
+
-
En
GAIN = 1
+
-
G3
GAIN = 24.89e-3
+
-
G3
GAIN = 24.89e-3
+
-
G12
GAIN = 0.02
+
-
G12
GAIN = 0.02
IOS1
25e-12
IOS1
25e-12
M14
NCHANNELMOSFET
M14
NCHANNELMOSFET
R8
4
R8
R16
10e3
R16
10e3
+
-
G10
GAIN = 0.02
+
-
G10
GAIN = 0.02
+
-
G7
GAIN = 6.283e-4
+
-
G7
GAIN =
DX
D6
DX
D6
R19
50
R19
50
L1
15.9159E-3
L1
15.9159E-3
DX
D5
DX
D5
-
+
-
E4
-
+
-
E4
DX
D8
DX
D8
-
+
-
EOS
GAIN = 1e-3
-
+
-
EOS
GAIN =
R22
5e11
R22
5e11
ISY
300e-6
ISY
300e-6
R1
4.0004
R1
+
-
G1
GAIN = 334.753e-3
+
-
G1
GAIN = 334.753e-3
I2
5e-3
I2
5e-3
R18
1591.596
R18
+
-
G1A
GAIN = 351
+
-
G1A
GAIN =
V6
.604
V6
.604
R24
10
R24
10
V5
.604
V5
.604
C2
2E-9
C2
2E-9
C3
2E-9
C3
2E-9
DN
D13
DN
D13
FIGURE 21. SPICE SCHEMATIC
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
929647-03-36-EU CONN HEADER 36POS STR .100" GOLD
77313-162-28 HDR STR DR .100 DP
2534-5003UB CONN HEADER 34POS R/A GOLD T/H
77315-818-21 CONN HEADER .100 1ROW R/A 21POS
75844-102-16 BERGSTIK STRAIGHT
鐩搁棞(gu膩n)浠g悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉)
鍙冩暩(sh霉)鎻忚堪
ISL28214FBZ-T7 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 5MHZ DUAL 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:2,500 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:3.5 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:5pA 闆诲 - 杓稿叆鍋忕Щ:1500µV 闆绘祦 - 闆绘簮:220µA 闆绘祦 - 杓稿嚭 / 閫氶亾:60mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):4.5 V ~ 36 V锛�±2.25 V ~ 18 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:甯跺嵎 (TR)
ISL28214FHZ-T7 鍔熻兘鎻忚堪:閬嬬畻鏀惧ぇ鍣� - 閬嬫斁 ISL28214FHZ Pb-Free Dual General Purpose Micropower, RRIO Op RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁�(sh霉)閲�:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁滃劅闆诲:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞�(zhu菐n)鎻涢€熷害:0.89 V/us 闂�(gu膩n)闁�:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel
ISL28214FHZ-T7A 鍔熻兘鎻忚堪:閬嬬畻鏀惧ぇ鍣� - 閬嬫斁 ISL28214FHZ Pb-Free Dual General Purpose Micropower, RRIO Op RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁�(sh霉)閲�:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁滃劅闆诲:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞�(zhu菐n)鎻涢€熷害:0.89 V/us 闂�(gu膩n)闁�:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel
ISL28214FUZ 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 5MHZ DUAL 8MSOP RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:73 绯诲垪:Over-The-Top® 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):4 杓稿嚭椤炲瀷:婊挎摵骞� 杞�(zhu菐n)鎻涢€熺巼:0.07 V/µs 澧炵泭甯跺绌�:200kHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:1nA 闆诲 - 杓稿叆鍋忕Щ:285µV 闆绘祦 - 闆绘簮:50µA 闆绘祦 - 杓稿嚭 / 閫氶亾:25mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):2 V ~ 44 V锛�±1 V ~ 22 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:16-WFDFN 瑁搁湶鐒婄洡 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:16-DFN-EP锛�5x3锛� 鍖呰:绠′欢
ISL28214FUZ-T7 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 5MHZ DUAL 8MSOP RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:2,500 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:3.5 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:5pA 闆诲 - 杓稿叆鍋忕Щ:1500µV 闆绘祦 - 闆绘簮:220µA 闆绘祦 - 杓稿嚭 / 閫氶亾:60mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):4.5 V ~ 36 V锛�±2.25 V ~ 18 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:甯跺嵎 (TR)