23 Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉锛� ISL28214FBZ-T13
寤犲晢锛� Intersil
鏂囦欢闋佹暩(sh霉)锛� 16/23闋�
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC OPAMP GP RRIO 5MHZ DUAL 8SOIC
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 2,500
鏀惧ぇ鍣ㄩ鍨嬶細 閫氱敤
闆昏矾鏁�(sh霉)锛� 2
杓稿嚭椤炲瀷锛� 婊挎摵骞�
杞�(zhu菐n)鎻涢€熺巼锛� 2.5 V/µs
澧炵泭甯跺绌嶏細 5MHz
闆绘祦 - 杓稿叆鍋忓锛� 3pA
闆诲 - 杓稿叆鍋忕Щ锛� 500µV
闆绘祦 - 闆绘簮锛� 300µA
闆绘祦 - 杓稿嚭 / 閫氶亾锛� 31mA
闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� 1.8 V ~ 5.5 V锛�±0.9 V ~ 2.5 V
宸ヤ綔婧害锛� -40°C ~ 125°C
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
灏佽/澶栨锛� 8-SOIC锛�0.154"锛�3.90mm 瀵級
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 8-SOIC
鍖呰锛� 甯跺嵎 (TR)
ISL28114, ISL28214, ISL28414
23
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN6800.8
November 15, 2012
For additional products, see www.intersil.com/product_tree
Small Outline Transistor Plastic Packages (SOT23-8)
D
e1
E
C
L
e
b
C
L
A2
A
A1
C
L
0.20 (0.008)
M
0.10 (0.004)
C
-C-
SEATING
PLANE
12
3
4
5
6
87
E1
C
L
C
VIEW C
L
R1
R
4X
胃1
4X
胃1
GAUGE PLANE
L1
SEATING
L2
C
PLANE
c
BASE METAL
WITH
c1
b1
PLATING
b
P8.064
8 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.036
0.057
0.90
1.45
-
A1
0.000
0.0059
0.00
0.15
-
A2
0.036
0.051
0.90
1.30
-
b
0.009
0.015
0.22
0.38
-
b1
0.009
0.013
0.22
0.33
c
0.003
0.009
0.08
0.22
6
c1
0.003
0.008
0.08
0.20
6
D
0.111
0.118
2.80
3.00
3
E
0.103
0.118
2.60
3.00
-
E1
0.060
0.067
1.50
1.70
3
e
0.0256 Ref
0.65 Ref
-
e1
0.0768 Ref
1.95 Ref
-
L
0.014
0.022
0.35
0.55
4
L1
0.024 Ref.
0.60 Ref.
L2
0.010 Ref.
0.25 Ref.
N8
8
5
R
0.004
-
0.10
-
R1
0.004
0.010
0.10
0.25
0o
8o
0o
8o
-
Rev. 2 9/03
NOTES:
1. Dimensioning and tolerance per ASME Y14.5M-1994.
2. Package conforms to EIAJ SC-74 and JEDEC MO178BA.
3. Dimensions D and E1 are exclusive of mold flash, protrusions, or gate
burrs.
4. Footlength L measured at reference to gauge plane.
5. 鈥淣鈥� is the number of terminal positions.
6. These Dimensions apply to the flat section of the lead between 0.08mm
and 0.15mm from the lead tip.
7. Controlling dimension: MILLIMETER. Converted inch dimensions
are for reference only
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
929647-03-36-EU CONN HEADER 36POS STR .100" GOLD
77313-162-28 HDR STR DR .100 DP
2534-5003UB CONN HEADER 34POS R/A GOLD T/H
77315-818-21 CONN HEADER .100 1ROW R/A 21POS
75844-102-16 BERGSTIK STRAIGHT
鐩搁棞(gu膩n)浠g悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉)
鍙冩暩(sh霉)鎻忚堪
ISL28214FBZ-T7 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 5MHZ DUAL 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:2,500 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:3.5 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:5pA 闆诲 - 杓稿叆鍋忕Щ:1500µV 闆绘祦 - 闆绘簮:220µA 闆绘祦 - 杓稿嚭 / 閫氶亾:60mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):4.5 V ~ 36 V锛�±2.25 V ~ 18 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:甯跺嵎 (TR)
ISL28214FHZ-T7 鍔熻兘鎻忚堪:閬�(y霉n)绠楁斁澶у櫒 - 閬�(y霉n)鏀� ISL28214FHZ Pb-Free Dual General Purpose Micropower, RRIO Op RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁�(sh霉)閲�:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞�(zhu菐n)鎻涢€熷害:0.89 V/us 闂�(gu膩n)闁�:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel
ISL28214FHZ-T7A 鍔熻兘鎻忚堪:閬�(y霉n)绠楁斁澶у櫒 - 閬�(y霉n)鏀� ISL28214FHZ Pb-Free Dual General Purpose Micropower, RRIO Op RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁�(sh霉)閲�:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞�(zhu菐n)鎻涢€熷害:0.89 V/us 闂�(gu膩n)闁�:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel
ISL28214FUZ 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 5MHZ DUAL 8MSOP RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:73 绯诲垪:Over-The-Top® 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):4 杓稿嚭椤炲瀷:婊挎摵骞� 杞�(zhu菐n)鎻涢€熺巼:0.07 V/µs 澧炵泭甯跺绌�:200kHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:1nA 闆诲 - 杓稿叆鍋忕Щ:285µV 闆绘祦 - 闆绘簮:50µA 闆绘祦 - 杓稿嚭 / 閫氶亾:25mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):2 V ~ 44 V锛�±1 V ~ 22 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:16-WFDFN 瑁搁湶鐒婄洡 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:16-DFN-EP锛�5x3锛� 鍖呰:绠′欢
ISL28214FUZ-T7 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 5MHZ DUAL 8MSOP RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:2,500 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:3.5 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:5pA 闆诲 - 杓稿叆鍋忕Щ:1500µV 闆绘祦 - 闆绘簮:220µA 闆绘祦 - 杓稿嚭 / 閫氶亾:60mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):4.5 V ~ 36 V锛�±2.25 V ~ 18 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:甯跺嵎 (TR)