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參數(shù)資料
| 型號(hào)： | IS66WVD409616ALL-7010BLI |
| 元件分類： | SRAM |
| 英文描述： | 4M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 |
| 封裝： | 8 X 6 MM, MO-207, VFBGA-54 |
| 文件頁數(shù)： | 49/52頁 |
| 文件大小： | 1128K |
| 代理商： | IS66WVD409616ALL-7010BLI |
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IS66WVD409616ALL
Advanced Information
6
Rev.00A | January 2010
www.issi.com - SRAM@issi.com
Notes
1. CLK must be LOW during Asynch Read and Asynch Write modes. CLK must be LOW to achieve
low standby current during standby mode and DPD modes. CLK must be static (LOW or HIGH)
during burst suspend.
2. Configuration registers are accessed when CRE is HIGH during the address portion
of a READ or WRITE cycle.
3. WAIT polarity is configured through the bus configuration register (BCR[10]).
4. When UB# and LB# are in select mode (LOW), ADQ0~ADQ15 are affected as shown.
When only LB# is in select mode, ADQ0~ADQ7 are affected as shown. When only UB# is
in select mode, ADQ8~ADQ15 are affected as shown.
5. The device will consume active power in this mode whenever addresses are changed with ADV#
LOW
6. When the device is in standby mode, address inputs and data inputs/outputs are internally
isolated from any external influence.
7. Vin=VDDQ or 0V, all device pins be static (unswitched) in order to achieve standby current.
8. Burst mode operation is initialized through the bus configuration register (BCR[15]).
9. Byte operation can be supported Write & Read at asynchronous mode and Write at
synchronous mode.
10. DPD is initiated when CE# transition from LOW to HIGH after writing RCR[4] to 0. DPD is
maintained until CE# transitions from HIGH to LOW
11. Initial cycle. Following cycles are the same as BURST CONTINUE. CE# must stay LOW
for the equivalent of a single word burst (as indicated by WAIT).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS66WVE1M16ALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1.8V Core Async/Page PSRAM |
| IS66WVE1M16ALL-70BLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1.8V Core Async/Page PSRAM |
| IS66WVE1M16BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:3.0V Core Async/Page PSRAM |
| IS66WVE1M16BLL-55BLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16Mb 1M x 16 55ns Pseudo 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS66WVE1M16BLL-55BLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16Mb 1M x 16 55ns Pseudo 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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