參數(shù)資料
型號: IS66WVD409616ALL-7010BLI
元件分類: SRAM
英文描述: 4M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54
封裝: 8 X 6 MM, MO-207, VFBGA-54
文件頁數(shù): 21/52頁
文件大小: 1128K
代理商: IS66WVD409616ALL-7010BLI
IS66WVD409616ALL
Advanced Information
28
Rev.00A | January 2010
www.issi.com - SRAM@issi.com
Electrical Characteristics
Parameter
Rating
Voltage to Any Ball Except VDD, VDDQ Relative to VSS
-0.3V to VDDQ + 0.3V
Voltage on VDD Supply Relative to VSS
-0.2V to + 2.45V
Voltage on VDDQ Supply Relative to VSS
-0.2V to + 2.45V
Storage Temperature (plastic)
-55°Cto + 150°C
Operating Temperature (case)
-40°Cto + 85°C
Soldering Temperature and Time : 10s (solder ball only)
+ 260°C
Table 11. Absolute Maximum Ratings
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other
conditions above those indicated in this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Description
Conditions
Symbol
MIN
MAX
Unit
Note
Supply Voltage
VDD
1.7
1.95
V
I/O Supply Voltage
VDDQ
1.7
1.95
V
Input High Voltage
VIH
VDDQ-0.4
VDDQ+0.2
V
1
Input Low Voltage
VIL
-0.20
0.4
V
2
Output High Voltage
IOH = -0.2mA
VOH
0.80 VDDQ
V
3
Output Low Voltage
IOL = +0.2mA
VOL
0.20 VDDQ
V
3
Input Leakage Current
VIN = 0 to VDDQ
ILI
1
uA
Output Leakage Current
OE#=VIH or
Chip Disabled
ILO
1
uA
Operating Current
Conditions
Symbol
TYP
MAX
Unit
Note
Asynchronous Random
READ/WRITE
VIN = VDDQ or 0V
Chip enabled,
IOUT = 0
IDD1
-70
25
mA
4
Initial Access, Burst
READ/WRITE
IDD2
133Mhz
45
mA
4
104Mhz
35
80Mhz
30
Continuous Burst READ
IDD3R
133Mhz
40
mA
4
104Mhz
30
80Mhz
25
Continuous Burst WRITE
IDD3W
133Mhz
40
mA
4
104Mhz
35
80Mhz
30
Standby Current
VIN=VDDQ or 0V
CE#=VDDQ
ISB
140
uA
5
Table 12. Electrical Characteristics and Operating Conditions
Industrial Temperature (–40C < TC < +85C)
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