參數(shù)資料
型號: IRLI630G
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 200V的電壓,的Rds(on)\u003d 0.40ohm,身份證\u003d 6.2A)
文件頁數(shù): 4/8頁
文件大?。?/td> 337K
代理商: IRLI630G
IRLI630G
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
0
500
1000
1500
2000
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
10
20
30
40
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
V
G
I = 9.0A
V = 160V
V = 100V
V = 40V
A
0.1
1
10
100
0
0.4
0.8
1.2
1.6
T = 25°C
T = 150°C
V = 0V
V , Source-to-Drain Voltage (V)
I
S
A
0.1
1
10
100
1
10
100
1000
V , Drain-to-Source Voltage (V)
I
D
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
T = 150°C
Single Pulse
100μs
1ms
10ms
100ms
A
To Order
Next Data Sheet
Index
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